Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals.
Дата
2014
Автори
Sapelnikova, O.
Karachevtseva, L.
Lytvynenko, O.
Stroyuk, O.
Smirnov, O.
Matveeva, L.
Kolyadina, O.
Kuchmii, S.
Заголовок журналу
Журнал ISSN
ISSN журналу
1605-6582
Назва тому
Видавець
Semiconductor Physics, Quantum Electronics & Optoelectronics.
Анотація
Опис
The Si-Si02 interface in oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and photoconductivity. The Franz-Keldysh effect, built-in electric field and surface quantization of charge carriers in the Si-Si02 region were revealed. The splitting of photoconductivity peaks was detected in the area of indirect band-to-band transition due to quantization of charge carriers in the surface silicon region, too. The latter data correlate with the results of the electroreflectance spectra measurements in the area of direct interband transition of oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals.
Ключові слова
macroporous silicon, Si-Si02 interface, CdS and ZnO nanocrystals, Franz-Keldysh effect, surface quantization
Кафедра авторів
кафедра фізики
Бібліографічний опис
Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals Physics / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov // Stroyuk Semiconductor Physics, Quantum Electronics & Optoelectronics : scientific journal / V. Lashkaryov Institute of Semiconductor Physics. - 2014. – Vol.17, №2. – P. 168-173. -Bibliogr. : 11 titl.
УДК
535.36/.37, 539.975, 539.219